| PART |
Description |
Maker |
| BZW06P64 BZW06P33 BZW06P33B BZW06P7V0 BZW06-64B BZ |
Diode TVS Single Uni-Dir 273V 600W 2-Pin DO-15
Diode TVS Single Bi-Dir 64.1V 600W 2-Pin DO-15
Diode TVS Single Uni-Dir 64.1V 600W 2-Pin DO-15
Diode TVS Single Bi-Dir 7.02V 600W 2-Pin DO-15
|
New Jersey Semiconductor
|
| 5KP90 |
Diode TVS Single Uni-Dir 90V 5KW 2-Pin Case P-6
|
New Jersey Semiconductors
|
| 30KP250 30KP320CA 30KP26A 30KP26C |
30KW TRANSIENT VOLTAGE SUPPRESSOR
Diode TVS Single Bi-Dir 320V 30KW 2-Pin Case D-6
Diode TVS Single Uni-Dir 26V 30KW 2-Pin Case D-6
Diode TVS Single Bi-Dir 26V 30KW 2-Pin Case D-6
|
New Jersey Semiconductor
|
| BDS11CECC BDS12CECC BDS10SMD-JQR-BR4 |
DIODE TVS 7.0V 600W UNI-DIR SM
DIODE TVS 75V 600W UNIDIR 5% SMB
15 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-276AB
|
SEMELAB LTD
|
| MMBZ15VAL MMBZ9V1AL MMBZ5V6AL10 MMBZ27VAL MMBZ6V2A |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
TVS UNIDIRECT CA 40W 14.5V SOT23 40 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| MMBZ9V1AL-7-F MMBZ5V6AL-7-F MMBZ6V8AL-7-F |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS 24 W, UNIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE
|
Diodes Inc.
Diodes, Inc.
|
| MMBZ20VAL MMBZ5V6AL MMBZ33VAL MMBZ27VAL MMBZ18VAL |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
|
DIODES[Diodes Incorporated]
|
| MMBZ10VAL-7-F MMBZ5V6AL-7-F MMBZ5V6AL1 MMBZ9V1AL-7 |
24W AND 40W PEAK POWER DUAL SURFACE MOUNT TVS
|
Diodes Incorporated
|
| NTE2945 |
SM DIO/SMBJ12A SMB UNI-DIR MOSFET的N沟道，增强模式高速开
MOSFET N-Channel, Enhancement Mode High Speed Switch
|
NTE Electronics, Inc.
|
| NX8563LA-AZ NX8563LA509-CD NX8563LAS509-CD NX8563L |
; Leaded Process Compatible:Yes
TVS UNI-DIR 68V 1500W DO-201
TVS BI-DIR 68V 1500W DO-201
3A 100V Schottky Rectifier; Package: Axial Lead 9.50x5.30mm, 25.4x1.20mm Pkg, Lead len/dia; No of Pins: 2; Container: Bulk; Qty per Container: 500
CONVERTER DC-DC 1W 5V/14V SGL
CONVERTER DC-DC 1W 5V/12V SGL
CONVERTER DC-DC 1W 7V/7V DUAL
DIODE ZENER SINGLE 200mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-323 3K/REEL
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
MILITARY BATTERY RoHS Compliant: NA 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
DIODE ZENER SINGLE 500mW 5.6Vz 20mA-Izt 0.02504 0.5uA-Ir 2.5 SOD-123 3K/REEL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
CONVERTER DC-DC 1W 5V/5V DUAL 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块.5 GB /秒，110公里40公里REACH的DWDM城域和有线电视领域的应用
NECs DIRECTLY MODULATED InGaAsP MQW-DFB LASER DIODE MODULE FOR 2.5 GB/s, 110 KM AND 240 KM REACH DWDM METRO AND CATV APPLICATIONS 邻舍直接调制InGaAsP多量子阱激光器激光二极管模块2.5 GB /秒，110公里240公里REACH的DWDM城域和有线电视领域的应用
|
California Eastern Laboratories, Inc.
|
| BDT63C BDT63A-SM BDT63C-SM |
DIODE TVS 6.5V 1500W UNI 5% SMC
TRANSISTOR DARLINGTON
|
HI
|
| VGFM5.0A-FN5 |
90W SURFACE MOUNT UNI-DIRECTIONAL TVS DIODE-5.0V
|
WILLAS ELECTRONIC CORP
|
